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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor MJ11033 DESCRIPTION *Collector-Emitter Breakdown Voltage : V(BR)CEO= -120V(Min.) *High DC Current Gain: hFE= 1000(Min.)@IC= -25A : hFE= 400(Min.)@IC= -50A *Complement to Type MJ11032 APPLICATIONS *Designed for use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continunous Collector Current-Peak Base Current-Continunous Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range VALUE -120 -120 -5 -50 -100 -2 300 200 -55~+200 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 0.584 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MJ11033 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -0.1A; IB= 0 -120 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -25A; IB= -250mA -2.5 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= -50A; IB= 500mA -3.5 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= -25A; IB= -250mA -3.0 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= -50A; IB= -500mA VCE=-120V; RBE=1k VCE=-120V; RBE=1k; TC=150 VCE= -50V; IB= 0 -4.5 -2.0 -5.0 -2.0 V ICER Collector Cutoff Current mA ICEO Collector Cutoff Current mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -5.0 mA hFE-1 DC Current Gain IC= -25A, VCE= -5V 1000 18000 hFE-2 DC Current Gain IC= -50A, VCE= -5V 400 isc Websitewww.iscsemi.cn |
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